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* -6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tes.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI630

FQI65N06

FQI6N15

FQI6N25

FQI6N40

FQI6N40C

FQI6N45

FQI6N50

FQI6N60

FQI6N70

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